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| 3N90_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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3N90
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
900
V
1 μA
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
3 3.75 4.5 V
4.1 4.8 â¦
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
CISS
COSS
CRSS
COSS(EQ)
VDS=25V, VGS=0V, f=1MHz
VGS=0V, VDS=0V~400V
560
pF
69
pF
11
pF
34
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=30V, ID=0.5A, RG=25â¦
VDS=50V, ID=1.3A, VGS=10V
56
ns
78
ns
140
ns
72
ns
25.9
nC
7
nC
7.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6 V
Source-Drain Current
ISD
3A
Source-Drain Current (Pulsed)
ISDM
12 A
Notes: 1. Pulse width=300μs, Duty cycleâ¦1.5%
Note: 2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-290.D
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