3N90_15 Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

3N90
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V_GS=0V)
V_DSS
900
V
Drain-Gate Voltage (R_G=20kΩ)
Gate-Source Voltage
V_DGR
900
V
V_GSS
±30
V
Gate-Source Breakdown Voltage (I_GS=±1mA)
BV_GSO
30(MIN)
V
Continuous Drain Current
I_D
3
A
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 3)
I_DM
10
A
E_AS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-220/TO-263
TO-230
TO-220F/TO-220F1
P_D
90
25
W
TO-220F2
26
Junction Temperature
Storage Temperature
T_J
+150
°C
T_STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T_J(MAX)
3. L = 40mH, I_AS = 3A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD≦3A, di/dt≦200A/μs, V_DD≦BV_DSS, T_J≦T_J(MAX).
 THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/ TO-263
Junction to Case
TO-230
TO-220F/TO-220F1
TO-220F2
SYMBOL
θ_JA
θ_JC
RATING
62.5
1.38
5
4.9
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-290.D