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| 3N90Z Datasheet, PDF (3/6 Pages) Unisonic Technologies – 3 Amps, 900 Volts N-CHANNEL POWER MOSFET | |||
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3N90Z
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
900
V
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
1 μA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
3 3.75 4.5 V
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1.5A
4.1 4.8 â¦
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
590
pF
Output Capacitance
COSS VDS=25V, VGS=0V, f=1MHz
63
pF
Reverse Transfer Capacitance
CRSS
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
VDD=450V, ID=1.5 A, RG=4.7â¦
VGS=10V
18
ns
7
ns
Turn-Off Delay Time
Turn-Off Fall Time
tD(OFF)
tF
VDD=720V, ID=1.5 A, RG=4.7â¦
VGS=10V
45
ns
18
ns
Total Gate Charge
QG
22.7
nC
Gate-Source Charge
QGS
VDD=720V, ID=3A, VGS=10V
4.2
nC
Gate-Drain Charge
QDD
12
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6 V
Source-Drain Current
ISD
3A
Source-Drain Current (Pulsed)
ISDM
12 A
Reverse Recovery Current
IRRM
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse width=300μs, Duty cycleâ¦1.5%
ISD=3A, di/dt=100A/μs,
VDD=100V, TJ=25°C
8.7
A
510
ns
2.2
nC
2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-913.a
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