3N90Z Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3 Amps, 900 Volts N-CHANNEL POWER MOSFET

3N90Z
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V_GS=0V)
V_DSS
900
V
Drain-Gate Voltage (R_G=20kΩ)
V_DGR
900
V
Gate-Source Voltage
V_GSS
±20
V
Gate-Source Breakdown Voltage (I_GS=±1mA)
BV_GSO
30(MIN)
V
Insulation Withstand Voltage (DC)
V_ISO
2500
V
Avalanche Current (Note 2)
I_AR
3
A
Continuous Drain Current
I_D
3
A
Pulsed Drain Current
I_DM
10
A
Single Pulse Avalanche Energy (Note 3)
E_AS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P_D
25
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T_J(MAX)
3. starting T_J=25 °C, I_D=I_AR, V_DD=50V
4. I_SD≦3A, di/dt≦200A/μs, V_DD≦BV_DSS, T_J≦T_J(MAX).
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATING
62.5
5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-913.a