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| 3N90 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 3 Amps, 900 Volts N-CHANNEL POWER MOSFET | |||
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3N90
Power MOSFET
 ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6 V
Source-Drain Current
ISD
3A
Source-Drain Current (Pulsed)
ISDM
12 A
Reverse Recovery Current
IRRM
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
Note: 1.Pulse width=300μs, Duty cycleâ¦1.5%
ISD=3A, di/dt=100A/μs,
VDD=100V, TJ=25°C
8.7
A
510
ns
2.2
nC
Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-290.A
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