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| 3N90 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3 Amps, 900 Volts N-CHANNEL POWER MOSFET | |||
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3N90
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
Drain-Gate Voltage (RG=20kâ¦)
Gate-Source Voltage
Gate-Source Breakdown Voltage (IGS=±1mA)
Insulation Withstand Voltage (DC)
TO-220F
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VDGR
VGSS
BVGSO
VISO
IAR
ID
IDM
EAS
dv/dt
900
900
±30
30(MIN)
2500
3
3
10
180
4.5
V
V
V
V
V
A
A
A
mJ
V/ns
Power Dissipation
TO-220/ TO-263
TO-220F
PD
90
W
25
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISDâ¦3A, di/dtâ¦200A/μs, VDDâ¦BVDSS, TJâ¦TJ(MAX).
 THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/ TO-263
TO-220F
Junction to Case
TO-220/ TO-263
TO-220F
SYMBOL
θJA
θJC
RATING
62.5
62.5
1.38
5
UNIT
°C/W
°C/W
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1.5A
Forward Transconductance (Note 1)
gFS
VDS=15V, ID=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
Equivalent Output Capacitance (Note 2)
COSS(EQ) VGS=0V, VDS=0V~400V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
VDD=450V, ID=1.5 A, RG=4.7â¦
VGS=10V
Turn-Off Delay Time
Turn-Off Fall Time
tD(OFF)
tF
VDD=720V, ID=1.5 A, RG=4.7â¦
VGS=10V
Total Gate Charge
Gate-Source Charge
QG
QGS
VDD=720V, ID=3A, VGS=10V
Gate-Drain Charge
QDD
MIN TYP MAX UNIT
900
V
1 μA
±10 μA
3 3.75 4.5 V
4.1 4.8 â¦
2.1
S
590
pF
63
pF
13
pF
34
pF
18
ns
7
ns
45
ns
18
ns
22.7
nC
4.2
nC
12
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-290.A
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