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| 3N70K-MK Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL JUNCTIN SILICON FET | |||
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3N70K-MK
Preliminary
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ ID = 250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 30V, ID = 0.5A,
RG = 25⦠(Note 1, 2)
VDS= 50V,ID= 1.3A,
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty cycleâ¤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
700
V
10 μA
100 nA
-100 nA
0.6
V/°С
2.5
4.5 V
4.20 â¦
422 510 pF
37 55 pF
4.4 11 pF
42
ns
14
ns
94
ns
14
ns
13.7 16 nC
4.3
nC
1.38
nC
1.4 V
3.0 A
12 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R205-012.a
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