3N70K-MK Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL JUNCTIN SILICON FET

3N70K-MK
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
700
V
V_GSS
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
I_AR
3.0
A
I_D
3.0
A
Pulsed Drain Current (Note 2)
I_DM
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
Power Dissipation
Derate above 25°C
P_D
12
A
60
mJ
7.5
mJ
34
W
0.27
W/°C
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Junction Temperature
Operating Temperature
T_J
+150
°C
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 13.33mH, I_AS = 3A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD ≤3.0A, di/dt ≤ 200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
3.7
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-012.a