3N60_09 Datasheet, PDF (3/8 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

3N60
Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Turn-On Delay Time
t_D(ON)
10 30 ns
Turn-On Rise Time
Turn-Off Delay Time
t_R
t_D(OFF)
V_DD = 300V, I_D = 3.0 A, R_G = 25Ω
(Note 4, 5)
30 70 ns
20 50 ns
Turn-Off Fall Time
t_F
30 70 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_G
Q_GS
V_DS= 480V,I_D= 3.0A, V_GS= 10 V
(Note 4, 5)
Q_DD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
10 13 nC
2.7
nC
4.9
nC
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0 V, I_S = 3.0 A
1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
I_S
3.0 A
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
12 A
Reverse Recovery Time
Reverse Recovery Charge
t_RR
V_GS = 0 V, I_S = 3.0 A,
Q_RR dIF/dt = 100 A/μs (Note 4)
210
ns
1.2
μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 64mH, I_AS = 2.4A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
3. I_SD ≤ 3.0A, di/dt ≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-110,F