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3N60_09 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
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3N60
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
3N60-A
600
V
3N60-B
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 1)
IDM
12
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1)
EAR
200
mJ
7.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
75
Power Dissipation
TO-220F/TO-220F1
PD
34
W
TO-251/TO-252
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
+150
℃
-55 ~ +150
℃
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
Junction-to-Ambient
Junction-to-Case
PARAMETER
TO-220
TO-220F/TO-220F1
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
62.5
110
1.67
3.68
2.5
„ ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
3N60-A
Drain-Source Breakdown Voltage
3N60-B
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
Gate-Source Leakage Current Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
MIN TYP MAX UNIT
600
V
650
V
10 μA
100 nA
-100 nA
0.6
V/℃
2.0
4.0 V
2.8 3.6 Ω
350 450 pF
50 65 pF
5.5 7.5 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-110,F
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