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| 3N40_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | |||
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3N40
Preliminary
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=1.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=10V, VDD=30V, ID=1A,
RG=25⦠(Note 1, 2)
VDS=100V, ID=3A, IG=3.3mA
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=3A, VGS=0V
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
400
V
0.38
V/°C
10 µA
+100 nA
-100 nA
2.0
4.0 V
2.0 â¦
445 545 pF
60 80 pF
13 16 pF
40 50 ns
40 60 ns
100 120 ns
60 80 ns
40 60 nC
3.6
nC
9.8
nC
3.0 A
12 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-553.d
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