3N40_15 Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

3N40
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Avalanche Energy
Power Dissipation
Derate above 25°C
Continuous (T_C=25°C)
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220F
TO-252/TO-252D
TO-220F
TO-252/TO-252D
V_DSS
V_GSS
I_D
I_DM
E_AS
E_AR
P_D
400
V
±30
V
3
A
12
A
290
mJ
3
mJ
25
W
50
W
0.2
W/°C
0.4
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=56mH, I_AS=3.0 A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F
TO-252/TO-252D
Junction to Case
TO-220F
TO-252/TO-252D
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-553.d