3N40K-MT Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

3N40K-MT
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
400
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 2)
I_DM
3
12
A
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
290
mJ
3
mJ
TO-220
54
W
TO-220F/TO-220F1
Power Dissipation
TO-220F3
P_D
TO-220F2
25
W
26
W
TO-251/TO-252
50
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=56mH, I_AS=3.0 A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤4.4A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
2.28
4.9
4.8
2.5
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-011.b