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3N40K-MT Datasheet, PDF (1/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3N40K-MT
Preliminary
3A, 400V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 3N40K-MT is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 3N40K-MT is universally applied in electronic lamp
ballast based on half bridge topology and high efficient switched
mode power supply.
 FEATURES
* RDS(ON) < 2.0Ω @ VGS = 10 V, ID = 1.5 A
* High switching speed
* 100% avalanche tested
 SYMBOL
Power MOSFET
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N40KL-TA3-T
3N40KG-TA3-T
3N40KL-TF3-T
3N40KG-TF3-T
3N40KL-TF1-T
3N40KG-TF1-T
3N40KL-TF2-T
3N40KG-TF2-T
3N40KL-TF3T-T
3N40KG-TF3T-T
3N40KL-TM3-T
3N40KG-TM3-T
3N40KL-TN3-R
3N40KG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
Pin Assignment
1
2
3
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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Copyright © 2014 Unisonic Technologies Co., Ltd
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