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| 3N40 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 3A, 400V N-CHANNEL POWER MOSFET | |||
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3N40
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Forward
Gate- Source Leakage Current
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
RDS(ON) VGS=10V, ID=1.5A
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=320V, ID=3A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=3A, RG=25â¦
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=3A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=3A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 1)
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
400
V
0.38
V/°C
10 µA
+100 nA
-100 nA
2.0
4.0 V
1.6 2.0 â¦
350 460 pF
60 80 pF
7 9 pF
10 13 nC
3.0
nC
4.5
nC
12 30 ns
60 130 ns
20 50 ns
30 70 ns
3.0 A
12 A
1.5 V
190
ns
1.0
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-553.c
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