3N40 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3A, 400V N-CHANNEL POWER MOSFET

3N40
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
400
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 2)
I_DM
3
A
12
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
290
mJ
3
mJ
Power Dissipation
Derate above 25°C
TO-220F
TO-252
TO-220F
P_D
TO-252
25
W
50
W
0.2
W/°C
0.4
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=56mH, I_AS=3.0 A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-553.c