2SD2136_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

2SD2136
 TYPICAL CHARACTERISTICS
5 _{TC=25°С}
I_C-V_CE
4
90mA
80mA
I_B=100mA
3
70mA
60mA
50mA
40mA
2
30mA
20mA
1
10mA
00
2
4
6
8 10 12
Collector Emitter Voltage, V_CE (V)
P_C - T_A
2.0
Without Head Sink
1.6
1.2
0.8
0.4
0 _{0 20 40 60 80 100 120 140 160}
Ambient Temperature, T_A (°С)
10K
V_CE=4V
3K
1K
h_FE - I_C
0.3K
0.1K
30
10
T_C=100°С
T_C=25°С
T_C=-25°С
3
1
0.01 0.03 0.1 0.3
13
10
Collector Current, I_C (A)
NPN SILICON TRANSISTOR
8 _VCE=4V
7
6
I_C - V_BE
T_C=25°С
5
4 ^{TC=100°С}
T_C=-25°С
3
2
1
00
0.4 0.8 1.2 1.6 2.0 2.4
Base Emitter Voltage, V_BE (V)
100
V_CE(SAT) - I_C
30
10
3
T_C=100°С
1
0.3
T_C=25°С
0.1
0.03
0.01
0.01 0.03
0.1 0.3
T_C=-25°С
13
10
Collector Current, I_C (A)
300
V_CB=10V
250
T_C=25°С
f=200MH_Z
200
f_T - I_C
150
100
50
-00.01 -0.03 -0.1 -0.3
-1 -3
-10
Collector Current, I_C (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R204-011.E