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| 2SD2136_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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2SD2136
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
60
V
VEBO
6
V
Collector Current
Peak Collector Current
IC
3
A
ICP
5
A
SOT-223
1
W
Collector Dissipation
TO-126/TO-126C
PC
TO-126S
1.5
W
Junction Temperature
Storage Temperature
TJ
150
°С
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified )
PARAMETER
Collector-Base Breakdown Voltage
Collect Cutoff Current
Collect Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
SYMBOL
BVCEO
ICEO
ICES
IEBO
hFE1
hFE2
VCE(SAT)
VBE
fT
tON
tS
tF
ï® CLASSIFICATION OF hFE1
TEST CONDITIONS
IC=30mA, IB=0
VCE=60V, IB=0
VCE=60 V, VBE=0
VEB=6 V, IC=0
VCE=4V ,IC=1A
VCE=4V ,IC=3A
IC =3A, IB=0.375A
VCE=4V ,IC=3A
VCE=15V, IE=0.1A, f =200MHz
IC = 1A, IB1 =0.1A, IB2 =0.1A
MIN TYP MAX UNIT
60
V
300 µA
200 µA
1 mA
40
250
10
1.2 V
1.8 V
220
MHZ
0.5
µS
2.5
µS
0.4
µS
RANK
RANGE
P
40-90
Q
70-150
R
120-250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-011.E
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