2SC5305_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

UTC 2SC5305
DC current Gain
100
Ta = 125℃
25℃
-20℃
VCE = 5V
10
NPN EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
IC = 10 IB
1
VBE(sat)
VCE(sat)
0.1
1
0.01
0.1
1
10
COLLECTOR CURRENT, I C (A)
Collector-Emitter Saturation Voltage
100
IC = 5IB
25℃
1
Ta = 125℃
0.1
-20℃
0.01
0.01
0.1
1
10
COLLECTOR CURRENT, IC (A)
Switching Time
10
VCC = 300V
IC = 5IB1 = -2.5IB2
tSTG
1
tF
0.1
0.01
0.01
0.1
1
10
COLLECTOR CURRENT, I C (A)
Base-Emitter Saturation Voltage
10
IC = 5IB
1
-20℃
25℃
Ta = 125℃
0.1
0.01
0.1
1
10
COLLECTOR CURRENT, IC (A)
Collector Output Capacitance
1000
f = 1MHz
100
10
0.01
0.1
1
10
COLLECTOR CURRENT, I C (A)
1
1
10
100
COLLECTOR-BASE VOLTAGE, V CB (V)
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
3
QW-R203-028,A