2SC5305_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER
SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications
* Well controlled storage-time spread for all range of hFE
1
TO-220
ABSOLUTE MAXIMUM RATINGS
(T_C=25℃, unless otherwise noted.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)*
Base Current (DC)
Base Current (Pulse)*
Power Dissipation (T_C=25℃)
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
I_BP
P_C
Tj
Tstg
THERMAL CHARACTERISTICS
(T_C=25℃, unless otherwise noted.)
PARAMETER
Thermal Resistance
Junction to Case
Junction to Ambient
SYMBOL
RθJC
RθJA
1: Base 2: Collector 3: Emitter
*Pb-free plating product number: 2SC5305L
RATINGS
800
400
12
5
10
2
4
75
150
-65 ~ 150
UNIT
V
V
V
A
A
A
A
W
℃
℃
RATINGS
1.65
62.5
UNIT
℃/W
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
1
QW-R203-028,A