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| 2N60ZL Datasheet, PDF (3/6 Pages) Unisonic Technologies – 2A, 600V N-CHANNEL POWER MOSFET | |||
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2N60ZL
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS =0V,
f =1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
tD (ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD =300V, ID =2.4A, RG=25â¦
(Note 1, 2)
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
tRR
VGS = 0 V, ISD = 2.4A,
Reverse Recovery Charge
QRR
di/dt = 100 A/μs (Note1)
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty cycleâ¤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
600
0.4
V
10 μA
5 μA
-5 μA
V/°С
2.0
4.0 V
4.2 5 â¦
270 350 pF
40 50 pF
5 7 pF
10 30 ns
25 60 ns
20 50 ns
25 60 ns
9.0 11 nC
1.6
nC
4.3
nC
1.4 V
2.0 A
8.0 A
180
ns
0.72
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-830.A
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