2N60ZL Datasheet, PDF (2/6 Pages) Unisonic Technologies – 2A, 600V N-CHANNEL POWER MOSFET

2N60ZL
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V_DSS
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
600
V
±20
V
2.0
A
2.0
A
8.0
A
140
mJ
4.5
mJ
4.5
V/ns
Power Dissipation
TO-251/TO-252
P_D
44
W
Junction Temperature
T_J
+150
°С
Ambient Operating Temperature
T_OPR
-55 ~ +150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J
3. L=64mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤2.4A, di/dt≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
TO-251/TO-252
Junction to Case
TO-251/TO-252
SYMBOL
θ_JA
θ_Jc
RATINGS
100
2.87
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-830.A