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| 2N5401 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP high-voltage transistor | |||
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2N5401
TYPICAL CHARACTERISTICS
Capacitance vs. Collector-
Base Voltage
20
16
f= 1M H z
12
IE= 0
8
4
0
-10 0
- 101
-102
Collector-Base Voltage (V)
Collector Current vs. Base-Emitter
Voltage
-103
-102
VCE =-5 V
-101
-100
0 -0.2 -0.4 -0 .6 -0 .8 -1.0
Base-Emitter V oltage (V)
Current Gain-B andwidth Product
vs. Collector Current
103
V CE=- 10V
102
101
100
-10-1 -100 -101 -10 2 -10 3
Collector Current, Ic(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
DC Current Gain vs.
Collector Current
103
V CE=-5V
102
10 1
100
-10 -1 -10 0 -101 -102 -103
Collector Current , Ic (mA)
Saturation Voltage vs.
Collector Current
-10 1
I C= 10* IB
-10 0
VBE(SAT)
-10 -1
VCE (SAT)
-10 -2
- 10-1 -10 0 -101
-102 -103
Collector Current , Ic (mA)
3 of 4
QW-R201-001,D
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