2N5401 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-160
V
Collector-Emitter Voltage
V_CEO
-150
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-600
mA
Collector Dissipation
Junction Temperature
Storage Temperature
TO-92
625
mW
SOT-89
P_C
500
mW
T_J
+150
Ċ
T_STG
-55 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
Collector-Emitter Saturation Voltage
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(SAT)
Base-Emitter Saturation Voltage
V_BE(SAT)
Current Gain Bandwidth Product
f_T
Output Capacitance
Cob
Noise Figure
NF
Note: Pulse test: PW<300µs, Duty Cycle<2%

TEST CONDITIONS
Ic = -100µA, I_E = 0
Ic = -1mA, I_B = 0
I_E = -10µA, Ic = 0
V_CB = -120V, I_E = 0
V_EB = -3V, Ic = 0
V_CE = -5V, Ic = -1mA
V_CE = -5V, Ic = -10mA
V_CE = -5V, Ic = -50mA
Ic = -10mA, I_B = -1mA
Ic = -50mA, I_B = -5mA
Ic = -10mA, I_B = -1mA
Ic = -50mA, I_B = -5mA
V_CE = -10V, Ic = -10mA
f = 100MHz
V_CB = -10V, I_E = 0, f = 1MHz
Ic = -0.25mA, V_CE = -5V
Rs = 1kΩ, f = 10Hz ~ 15.7kHz
MIN TYP MAX UNIT
-160
V
-150
V
-6
V
-50 nA
-50 nA
80
80
400
80
-0.2 _V
-0.5
-1
-1
V
100
400 MHz
6.0 pF
8 dB
CLASSIFICATION OF h_FE
RANK
RANGE


A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-001,D