20N60_15 Datasheet, PDF (3/3 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

20N60
 TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source On-State Resistance
Characteristics
20
18
16
14
12
10
V_GS=10V, I_D=10A
8
6
4
2
0
01
2 3 4 5 6 78
Drain to Source Voltage, V_DS (V)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-587.H