20N60_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

20N60
 ABSOLUTE MAXIMUM RATINGS (T_C =25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Avalanche Energy
Power Dissipation
Continuous
Pulsed
Single Pulsed(Note 2)
TO-247
TO-3P
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
600
V
±20
V
20
A
80
A
1200
mJ
370
416
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V_DD=50V, Starting T_J=25°С, Peak I_AS=20A, L=6mH
 THERMAL DATA
PARAMETER
Junction to Ambient
TO-247
TO-3P
Junction to Case
TO-247
TO-3P
SYMBOL
θ_JA
θ_JC
RATINGS
40
30
0.34
0.3
 ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BV_DSS
I_DSS
I_GSS
I_D=250µA, V_GS=0V
V_DS=600V, V_GS=0V
V_GS=+20V, V_DS=0V
V_GS=-20V, V_DS=0V
600
V
10 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=10A, Pulse test,
t≤300µs, duty cycle d≤2%
2
4.0 V
0.32 0.45 Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_GS=0V, V_DS=25V, f=1MHz
4500
pF
330
pF
140
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Q_G
Q_GS
Q_GD
t_D(ON)
t_R
t_D(OFF)
t_F
V_GS=10V, V_DS=300V, I_D=10A
(Note 1, 2)
V_GS=10V, V_DS=300V, I_D=10A,R_G=2Ω,
(Note 1, 2)
170 nC
40 nC
85 nC
110 40 ns
130 60 ns
800 90 ns
170 60 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
I_S
V_GS=0V
Maximum Body-Diode Pulsed Current
I_SM Repetitive
Drain-Source Diode Forward Voltage
V_SD
I_F=I_S, V_GS=0V, Pulse test,
t≤300µs, duty cycle d≤2%
Body Diode Reverse Recovery Time
t_rr
I_F=I_S,V_R=100V,-di/dt=100A/µs(Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
20 A
80 A
1.5 V
600
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-587.H