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| 20N40 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 400V, 23A N-CHANNEL POWER MOSFET | |||
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20N40
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Forward
Gate- Source Leakage Current
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
RDS(ON) VGS=10V, ID=11.5A
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge at 10V
Gate to Source Charge
QG(TOT)
QGS
VDS=320V, ID=23A (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=200V, ID=23A, RG=25â¦
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=23A, VGS=0V
Body Diode Reverse Recovery Time
trr
ISD=23A, VGS=0V,
Body Diode Reverse Recovery Charge
QRR
dIF/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially Independent of Operating Temperature Typical Characteristics
MIN TYP MAX UNIT
400
V
0.5
V/°C
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.15 0.2 â¦
2280 3030 pF
370 490 pF
25 38 pF
46 60 nC
13
nC
18
nC
40 90 ns
92 195 ns
120 250 ns
75 160 ns
23 A
92 A
1.5 V
110
ns
0.3
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-623.b
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