20N40 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 400V, 23A N-CHANNEL POWER MOSFET

20N40
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
400
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous ^TC=25°C
T_C=100°C
I_D
23
A
13.8
A
Pulsed (Note 2)
I_DM
92
A
Avalanche Current (Note 2)
I_AR
23
A
Single Pulsed (Note 3)
Avalanche Energy
E_AS
Repetitive (Note 2)
E_AR
1190
mJ
23.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T_C=25°C)
Derate above 25°C
235
W
P_D
1.8
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 4.5mH, I_AS = 23A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 23A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
40
0.53
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-623.b