1N60_15 Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

1N60
Power MOSFET
■ ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V_DSS
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
600
V
±30
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
SOT-223
8
TO-251/TO-252
TO-252D/TO-251S
28
TO-251S2/ TO-251S4
Power Dissipation
TO-220
P_D
TO-220F
40
W
21
TO-220F2
23
TO-92(T_A=25°С)
1
TO-126
12.5
Junction Temperature
T_J
+150
°С
Operating Temperature
T_OPR
-55 ~ +150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I_AS = 1A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 1.2A, di/dt ≤ 200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
SOT-223
TO-251/TO-252
TO-252D/TO-251S
Junction to Ambient
TO-251S2/ TO-251S4
TO-220/TO-220F
TO-220F2
TO-92
TO-126
SOT-223
TO-251/TO-252
TO-252D/TO-251S
TO-251S2/ TO-251S4
Junction to Case
TO-220
TO-220F
TO-220F2
TO-92
TO-126
SYMBOL
θ_JA
θ_Jc
RATINGS
150
110
62.5
62.5
140
132
14
4.53
3.13
5.95
5.43
80
10
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-052.N