1N60_15 Datasheet, PDF (1/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2A, 600V N-CHANNEL
POWER MOSFET
 DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
 FEATURES
* R_DS(ON) <11.5Ω@ V_GS=10V, I_D=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (C_RSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
Power MOSFET
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