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| 1N40 Datasheet, PDF (3/4 Pages) Unisonic Technologies – 1 Amps, 400 Volts N-CHANNEL POWER MOSFET | |||
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1N40
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Gate- Source Leakage Current Forward
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
RDS(ON) VGS=10V, ID=0.7A
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
CRSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=320V, ID=1.8A
(Note 4, 5)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=1.8A, RG=25â¦
(Note 4, 5)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=1.4A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=1.8A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 4)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 75mH, IAS = 1.4A, VDD = 50V, RG = 25â¦, Starting TJ = 25°C
3. ISD ⤠1.8A, di/dt ⤠200A/µs, VDD ⤠BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
5. Essentially independent of operating temperature
MIN TYP MAX UNIT
400
V
0.4
V/°C
1 µA
+100 nA
-100 nA
2.0
4.0 V
4.5 5.8 â¦
115 150 pF
20 30 pF
3 4 pF
4.0 5.5 nC
1.1
nC
2.1
nC
7 25 ns
30 70 ns
7 25 ns
25 60 ns
1.4 A
5.6 A
1.5 V
160
ns
0.4
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-529.a
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