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1N40 Datasheet, PDF (2/4 Pages) Unisonic Technologies – 1 Amps, 400 Volts N-CHANNEL POWER MOSFET | |||
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1N40
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
Pulsed (Note 1)
IDM
1.4
A
5.6
A
Avalanche Current (Note 1)
IAR
1.4
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1
EAR
85
mJ
2.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
25
W
TO-92
Power Dissipation
TO-220
PD
Derate above 25°C
TO-92
2.5
W
0.2
W/°C
0.02
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-92
TO-220
TO-92
SYMBOL
θJA
θJC
RATINGS
62.5
140
5.0
50
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-529.a
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