X1049A Datasheet, PDF (2/3 Pages) Unisonic Technologies – HIGH GAIN TRANSISTOR

UTC X1049A NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
CONDITIONS
Collector-Emitter Saturation Voltage VCE(sat) _{IC=0.5A, IB=10mA*}
IC=1A, IB=10mA*
IC=2A, IB=10mA*
IC=4A, IB=50mA*
Base-Emitter Saturation Voltage
VBE(sat) IC=4A, IB=50mA*
Base-Emitter Turn-On Voltage
VBE(on) IC=4A, VCE=2V*
DC Current Gain
hFE
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=20A, VCE=2V*
Transition Frequency
fT
IC=50mA, VCE=10V,f=50MHz
Output Capacitance
Cobo
VCB=10V, f=1MHz
Turn - On Time
ton
IC=4A, IB=40mA, VCC=10V
Turn -Off Time
toff
IC=4A, IB=±40mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
MIN TYP
30
60
125
155
890
820
250 430
300 450
300 450
200 350
7
180
45
125
380
MAX
70
130
280
400
980
920
UNIT
mV
mV
mV
1200
MHz
60 pF
ns
ns
TYPICAL CHARACTERISTICS
VCE(sat) - IC
1.0
+25℃
0.8
1.0
Ic/IB=100
0.8
VCE(sat) - IC
0.6
Ic/IB=10
Ic/IB=50
0.4
Ic/IB=100
Ic/IB=200
0.2
0.6
-55℃
0.4
+25℃
+100℃
+175℃
0.2
0
1mA
10mA 100mA 1A
10A
IC-Collector Current
100A
0
1mA
10mA 100mA 1A
10A
IC-Collector Current
100A
hFE - IC
700 ^VCE=2V
600 _+100℃
500
+25℃
400
300 _-55℃
200
100
0
1mA
10mA 100mA 1A
10A
IC-Collector Current
100A
VBE(sat) - IC
1.4 _Ic/IB=100
1.2
-55℃
+25℃
1.0 ^+100℃
+175℃
0.8
0.6
0.4
0.2
0
1mA
10mA 100mA 1A
10A
IC-Collector Current
100A
UTC UNISONIC TECHNOLOGIES CO. LTD ²
QW-R201-061,A