X1049A Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH GAIN TRANSISTOR

UTC X1049A NPN EPITAXIAL SILICON TRANSISTOR
HIGH GAIN TRANSISTOR
FEATURES
*VCEV = 80V
*High Gain
*20 Amps pulse current
APPLICATIONS
*LCD Backlight converters
*Emergency lighting
*DC-DC converters
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Power Dissipation
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
Junction Temperature
Tj
Storage Temperature
Tstg
RATINGS
80
25
5
4
20
500
1
-55 ~+200
-55~ +200
UNIT
V
V
V
A
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified).
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
VCBO
VCEO
VCES
VCEV
VEBO
ICBO
CONDITIONS
IC=100µA
IC=10mA
IC=100µA
IC=100µA, VEB=1V
IE=100µA
VCB=50V
MIN
80
25
80
80
5
Emitter Cut-Off Current
IEBO
VEB=4V
Collector Emitter Cut-Off Current
ICES
VCES=50V
TYP
120
35
120
120
8.75
0.3
0.3
0.3
MAX
10
10
10
UNIT
V
V
V
V
V
nA
nA
nA
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R201-061,A