 English |
|
|
|
|
|
|
|
| UTT3205_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
| |||
| ◁ |
UTT3205
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (VGS=10V)
ID
Pulsed (Note 2)
IDM
110
A
390
Avalanche Current (Note 2)
IAR
62
A
Repetitive (Note 2)
Avalanche Energy
EAR
Single Pulsed (Note 3)
EAS
20
mJ
450
Power Dissipation (TC=25°C)
PD
200
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=138μH, RG=25â¦, IAS=62A
 THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
Junction to Case
θJA
62
θJC
0.75
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS
VDS=55V,VGS=0V
Forward
Gate- Source Leakage Current
Reverse
Breakdown Voltage Temperature Coefficient
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
â³BVDSS/â³TJ Reference to 25°C, ID=1mA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
Static Drain-Source On-Resistance (Note)
RDS(ON) VGS=10V, ID=62A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate Source Charge
QGS VDS=44V, ID=62A, VGS=10V
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=28V, ID=62A, RG=4.5â¦,
VGS=10V (Note)
Turn-OFF Fall-Time
tF
Internal Drain Inductance
LD
Internal Source Inductance
LS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=62A ,VGS=0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Note: Pulse widthâ¤400μs; duty cycleâ¤2%.
UNIT
°C/W
°C/W
MIN TYP MAX UNIT
55
V
25 μA
+100 nA
-100 nA
0.057
V/°C
1.4
3.0 V
8 mâ¦
3247
pF
781
pF
211
pF
146 nC
35 nC
54 nC
14
ns
101
ns
50
ns
65
ns
4.5
nH
7.5
nH
1.3 V
110 A
390 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-510.c
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese