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UTT3205_15 Datasheet, PDF (1/5 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
UTT3205
Preliminary
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
 DESCRIPTION
The UTC UTT3205 uses advanced technology to provide
excellent RDS(ON), fast switching, low gate charge, and excellent
efficiency. This device is suitable for all commercial-industrial
1
applications at power dissipation levels to approximately 50 watts.
 FEATURES
* RDS(ON)<8 m⦠@VGS=10V
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL
2.Drain
Power MOSFET
TO-220
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT3205L-TA3-T
UTT3205G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
 MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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