UT4414_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UT4414
Power MOSFET
 ABSOLUTE MAXIMUM RATING (T_A =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V_DSS
30
V
Gate to Source Voltage
V_GSS
±20
V
Continuous Drain Current (Note 1)
T_A =25°C
T_A =70°C
I_D
I_D
8.5
A
7.1
A
Pulsed Drain Current (Note 1)
I_DM
50
A
Total Power Dissipation
T_A =25°C
T_A =70°C
P_D
3
W
2.1
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
SYMBOL MIN
TYP
MAX UNIT
Junction to Ambient (Note 1)
t ≤10s
Steady-State
θ_JA
31
59
 ELECTRICAL CHARACTERISTICS (T_J =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
40
°C/W
75
°C/W
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BV_DSS
I_DSS
I_GSS
V_GS=0V, I_D=250µA
V_DS=24V,V_GS=0V
V_DS=0V ,V_GS=±20V
30
V
0.004 1 µA
100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
V_GS(TH)
I_D(ON)
R_DS(ON)
g_FS
V_DS= V_GS, I_D=250µA
V_GS=4.5V, V_DS=5V
V_GS=10V,I_D=8.5A
V_GS=4.5V, I_D=5A
V_DS=5V, I_D=5A
1 1.9 3
V
20
A
20 26 mΩ
31 40 mΩ
10 17
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C_ISS
C_OSS
C_RSS
R_G
V_DS=15V,V_GS=0V,f =1MHz
V_DS=0V,V_GS=0V,f =1MHz
680 820 pF
102
pF
77
pF
3 3.6 Ω
SWITCHING PARAMETERS
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Q_G
Q_G
Q_GS
Q_GD
t_D(ON)
t_R
t_D(OFF)
t_F
V_DS=15V, V_GS=10V, I_D=8.5A
V_DS=15V,V_GS=10V,R_G=3Ω,
R_L=1.8Ω
13.84 17 nC
6.74 8.1 nC
1.84
nC
3.32
nC
4.5 6.5 ns
4.2 6.3 ns
20.1 30 ns
4.9 7.5 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
4.3 A
Drain-Source Diode Forward Voltage
V_SD
I_S =1A, V_GS=0V
0.76 1
V
Body Diode Reverse Recovery Time
t_RR
I_F=8.5A, dI/dt=100A/μs
17.2 21 ns
Body Diode Reverse Recovery Charge
Q_RR I_F=8.5A, dI/dt=100A/μs
8.6 10 nC
Notes: 1. The value of θ_JA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air
environment with T_A=25°C. The value in any given application depends on the user's specific boar design.
The current rating is based on the t ≤ 10s thermal resistance rating.
2. Repetitive Rating : Pulse width limited by T_J.
3. The θ_JA is the sum of the thermal impedance from junction to lead θ_JL and lead to ambient.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-378.B