UT4414_15 Datasheet, PDF(1/3 Page) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT4414_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

UT4414

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

ï® DESCRIPTION

The UTC UT4414 is an N-channel enhancement mode FET with

excellent trench technology to provide customers perfect RDS(ON) and

low gate charge. The source leads are separated to allow a Kelvin

connection to the source, which may be used to bypass the source

inductance.

This device can be applied in a load switch or in PWM

applications.

ï® FEATURES

* VDSS = 30V

* ID=8.5A @VGS=10V

* RDS(ON) < 26mâ¦ @ VGS=10V,ID=8.5A

* RDS(ON) < 40mâ¦ @ VGS=4.5V, ID=5A

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

UT4414G-S08-R

Note: Pin Assignment: G: Gate

D: Drain

Package

SOP-8

S: Source

Pin Assignment

12345678

S S SGDDDD

Packing

Tape Reel

ï® MARKING

www.unisonic.com.tw

1 of 3

QW-R502-378.B

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