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UF830Z_15 Datasheet, PDF (2/8 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
UF830Z
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGS
±30
V
Drain Current
Continuous
Pulsed
ID
IDM
4.5
A
18
A
Power Dissipation (TC = 25°C)
PD
38
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
300
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.31
 ELECTRICAL SPECIFICATIONS (Ta =25°C, unless otherwise specified.)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
500
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250μA
2.0
On-State Drain Current (Note 1)
Drain-Source Leakage Current
Gate-Source Leakage Current
ID(ON)
IDSS
IGSS
VDS>ID(ON)×RDS(ON)MAX, VGS=10V 4.5
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
VGS=±30V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
ID=2.5A, VGS=10V
Forward Transconductance (Note 1)
gFS
VDS≥10V, ID=2.7A
2.5
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD=250V, ID≈4.5A
RGS=12Ω, RL =54Ω (Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
QG
QGS
QGD
CISS
VGS=10V, ID=4.5A
VDS=0.8×Rated BVDSS
IG(REF)=1.5mA (Note 3)
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4.0 V
A
25 μA
250 μA
±800 nA
1.3 1.5 Ω
4.2
S
10 17 ns
15 23 ns
33 53 ns
16 23 ns
22 32 nC
3.5
nC
11
nC
600
pF
100
pF
20
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-612.B