UF830Z_15 Datasheet, PDF(1/8 Page) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

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UF830Z_15 Datasheet, PDF (1/8 Pages) Unisonic Technologies – N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

UNISONIC TECHNOLOGIES CO., LTD

UF830Z

4.5A, 500V, 1.5Î©, N-CHANNEL

POWER MOSFET

ï® DESCRIPTION

The N-Channel enhancement mode silicon gate power

MOSFET is designed for high voltage, high speed power

switching applications, such as switching regulators, switching

converters, solenoid, motor drivers and related drivers.

ï® FEATURES

* RDS(ON) < 1.5â¦ @ ID=2.5A, VGS=10V

* Single Pulse Avalanche Energy Rated

* Rugged- SOA is Power Dissipation Limited

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* ESD Protected

ï® SYMBOL

2.Drain

Power MOSFET

1.Gate

3.Source

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

UF830ZL-TF3-T

UF830ZG-TF3-T

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-220F

Pin Assignment

123

GDS

Packing

Tube

UF830ZL-TF3-T

(1)Packing Type

(2)Package Type

(3)Green Package

(1) T: Tube

(2) TF3: TO-220F

(3) L: Lead Free, G: Halogen Free and Lead Free

ï® MARKING

www.unisonic.com.tw

1 of 8

QW-R502-612.B

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