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| UF640-P Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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UF640-P
Power MOSFET
ï® ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RGS=20kâ¦)
VDSS
VDGR
200
V
200
V
Gate-Source Voltage
Continuous Drain Current
VGSS
ID
±20
V
18
A
Pulsed Drain Current (Note 2)
IDM
Single Pulse Avalanche Energy Rating (Note 2)
EAS
72
A
580
mJ
Maximum Power Dissipation
Junction Temperature
PD
123
W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, VDD=50V, RG=25â¦, peak IAS=18A, starting TJ=25°C.
3. Pulse width limited by TJ(MAX)
ï® THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1.01
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-A17.A
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