UF640-P Datasheet, PDF (1/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UF640-P
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
 DESCRIPTION
These kinds of n-channel power MOSFET field effect
transistor have low conduction power loss, high input
impedance, and high switching speed, Linear Transfer
1
Characteristics, so can be use in a variety of power conversion
applications.
The UF640-P suitable for resonant and PWM converter
topologies.
 FEATURES
* R_DS(ON) =0.18Ω@ V_GS=10V, I_D=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C_RSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
Power MOSFET
TO-220
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640L-TA3-T
UF640G-TA3-T
Package
TO-220
Pin Assignment
1
2
3
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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