PZT4033 Datasheet, PDF (2/4 Pages) Unisonic Technologies – PNP SILICON TRANSISTOR

UTC PZT4033
PARAMETER
Base-emitter saturation voltage
Gain Bandwidth Product
Output capacitance
Intput capacitance
Turn-on Time
Switching Time Storage Time
Fall Time
PNP EPITAXIAL SILICON TRANSISTOR
SYMBOL
VBE(sat)
fT
Cob
Cib
ton
tstg
tf
TEST CONDITIONS
Ic=-150mA,IB=-15mA
Ic=-500mA,IB=-50mA
VCE= -10V,Ic= -50mA, f=1MHz
VCB=-10V,IE=0, f=1MHz
VEB=-0.5V,IC=0, f=1MHz
Ic=-500 mA, VCE= -30V,
IB1=- IB2=-50mA
MIN
100
TYP
MAX
-0.9
-1.1
20
110
100
350
50
UNIT
V
MHz
pF
pF
ns
ns
ns
TYPICAL PARAMETERS PERFORMANCE
Typical Pulsed Current Gain
vs Collector Current
300
VCE=5V
250
200
Ta =125℃
150
100 Ta =25℃
50 _{Ta = -40℃}
0
0.1 0.3 1
3 10 30 100 300 1000
Ic -Collector Current (mA)
1.2
β =10
Base-emitter Saturation Voltage
vs Collector Current
1
Ta =-40℃
0.8
Ta =25℃
0.6
Ta =125℃
0.4
10
100
100
Ic -Collector Current(mA)
Collector Cut off Current
vs Ambient Temperature
VCB=5V
10
1000
1
0.1
25
50
75
100
125 150
TA-Ambient Temperature (℃)
Collector-emitter Saturation Voltage
vs Collector Current
β =10
0.6
Ta =25℃
0.4
Ta =-40℃
0.2
Ta =125℃
10
1.0
VCE=5V
100
Ic -Collector Current(mA)
Base-emitter ON Voltage
vs Collector Current
0.8
Ta =-40℃
0.6
Ta =25℃
1000
0.4
Ta =125℃
0.2
0.1
1
10
50
Ic -Collector Current(mA)
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
500
f =1.0MHz
200
100
Cibo
50
20
10
Cobo
6
-0.1
-1
-10
-50
Reverse Bias Voltage ( V)
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
2
QW-R207-002,A