PZT4033 Datasheet, PDF (1/4 Pages) Unisonic Technologies – PNP SILICON TRANSISTOR

UTC PZT4033
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC PZT4033 designed for high current general
purpose amplifier applications.
3
2
1
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-80
Collector-emitter voltage
VCEO
-80
Emitter-base voltage
VEBO
-5
Power dissipation
PD
2
Collector current
Ic
-1
Junction Temperature
Tj
-65 ~ +150
Storage Temperature
TSTG
-65 ~ +150
Thermal Resistance
RθJA
62.5
UNIT
V
V
V
W
A
°C
°C/W
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-10µA,IE=0
-80
Collector-emitter breakdown voltage BVCEO
Ic=-10mA,IB=0
-80
Emitter-base breakdown voltage
BVEBO
IE=-10µA,Ic=0
-5
Collector cut-off current
ICBO
VCB=-60V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,Ic=0
DC current gain(note)
hFE
VCE=-5V,Ic=-0.1mA
75
VCE=-5V,Ic=-100mA
100
VCE=-5V,Ic=-500mA
70
VCE=-5V,Ic=-1A
25
Collector-emitter saturation voltage VCE(sat)
Ic=-150mA,IB=-15mA
Ic=-500mA,IB=-50mA
TYP
MAX
-50
-10
UNIT
V
V
V
nA
nA
300
-0.15 V
-0.5
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R207-002,A