MJE2955T Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60V,75W)

UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
1000
100
DC current Gain
VCE = -2V
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC = 10IB
-1
VBE(sat)
10
1
-0.01
-0.1
-1
-10
COLLECTOR CURRENT, I C (A)
Safe Operating Area
-100
-10
DC ^5ms1ms
-1
-0.1
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE, V CE (V)
-0.1
VCE(sat)
-0.01
-0.1
-1
-10
COLLECTOR CURRENT, I C (A)
-100
105
90
75
60
45
30
15
0
0
Power Derating
25 50 75 100 125 150 175
CASE TEMPERATURE, TC (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
2
QW-R203-012,B