MJE2955T Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60V,75W)

UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE2955T is designed for general
purpose of amplifier and switching applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
70
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
5
V
Total Power Dissipation(Ta=25°C)
Pc
75
W
Collector current
Ic
10
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Base Current
IB
6
A
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-emitter breakdown voltage BVCEO
Ic=200mA
60
Collector-Base Breakdown Voltage VBCBO
Ic=10mA
70
Emitter-Base Breakdown Voltage
BVEBO
IE=10mA
5
Collector cut-off current
ICBO
VCB=70V
ICEO
VCE=30V
ICEX
VCE=70V,VEB(off)=1.5V
Emitter cut-off current
IEBO
VEB=5V
Collector-emitter saturation voltage VCE(SAT)1
IC=4A,IB=0.4A
VCE(SAT)2
IC=10A,IB=3.3A
Baser-emitter on voltage
VBE(ON)
VCE=4V,IC=4A
DC current gain
hFE1
IC=4A,VCE=4V
20
hFE2
IC=10A,VCE=4V
5
Current gain bandwidth product
fT
VCE=10V,IC=0.5A,f=1MHz
2
TYP
MAX
1
700
1
5
1.1
8.0
1.8
100
UNIT
V
V
V
mA
µA
mA
mA
V
V
MHZ
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R203-012,B