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| MJE13009-Q Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS | |||
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MJE13009-Q
Preliminary
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Sustaining Voltage
VCEO
400
V
Collector-Emitter Breakdown Voltage
VCBO
700
V
Emitter-Base Voltage
VEBO
9.0
V
Collector Current
Continuous
IC
Peak (1)
ICM
8.0
A
16
A
Base Current
Continuous
IB
Peak (1)
IBM
4.0
A
8.0
A
Emitter Current
Continuous
IE
Peak (1)
IEM
12
A
24
A
Power Dissipation (TC = 25°C)
PD
80
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
Note: 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycleâ¤10%.
1.56
°C/W
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in
a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting
torque of 6 to 8â¢lbs.
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA, IB=0
Collector Cutoff Current
ICBO
VCES=700V
VCES=700V, TC=125°C
Emitter Cutoff Current
DC Current Gain
IEBO
VEB=9.0V, IC=0
hFE1
IC=2.0A, VCE=5.0V
hFE2
IC=5.0A, VCE=5.0V
IC=2.0A, IB=0.4A
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=5.0A, IB=1.0A
IC=8.0A, IB=2.0A
Base-Emitter Saturation Voltage
VBE(SAT)
IC=5.0A, IB=1.0A, TC=100°C
IC=2.0A, IB=0.4A
IC=5.0A, IB=1.0A
IC=5.0A, IB=1.0A, TC=100°C
Current-Gain-Bandwidth Product
Output Capacitance
fT
IC=500mA, VCE=10V, f=1.0 MHz
COB VCB=10V, IE=0, f=0.1MHz
RESISTIVE LOAD (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
tS
VCC=125V, IC=5.0A,
IB1=IB2=1.0A, tP=25μs,
Duty Cycleâ¤1.0%
tF
Note: Pulse Test: Pulse Widthâ¤300μs, Duty Cycleâ¤2.0%
MIN TYP MAX UNIT
400
V
0.1 mA
1.0 mA
100 μA
8.0
40
5.0
30
1.0 V
2.0 V
3.0 V
3.0 V
1.2 V
1.6 V
1.5 V
4.0 14
MHz
80
pF
0.025 0.1 μs
0.5 1.5 μs
1.8 3.0 μs
0.23 0.7 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R223-026.a
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