2SD1802_2 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH CURRENT SWITCHING APPLICATION

UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
PARAMETER
Storage Time
Fall Time
SYMBOL
tstg
tf
TEST CONDITIONS
See test circuit
See test circuit
MIN TYP MAX UNIT
650
ns
35
ns
CLASSIFICATION OF h_FE1
RANK
R
RANGE
100-200
S
140-280
T
200-400
U
280-560
TEST CIRCUIT (Unit : resistance : Ω, capacitance : F)
UTC UNISONIC TECHNOLOGIES CO. LTD ²
QW-R209-001,A