2SD1802_2 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH CURRENT SWITCHING APPLICATION

UTC 2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1802 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
FEATURES
1
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
TO-252
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
6
Collector Power Dissipation
Pc
1
Tc=25°C
15
Collector Current(DC)
Ic
3
Collector Current(PULSE)
Icp
6
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
W
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (note)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
ICBO
IEBO
h_FE1
h_FE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
V_CB=40V,I_E=0
V_EB=4V,I_C=0
V_CE=2V, Ic=100mA
100
V_CE=2V, Ic=3A
35
V_CE=10V,I_C=50mA
V_CB=10V,f=1MHz
I_C=2A,I_B=100mA
I_C=2A,I_B=100mA
I_C=10µA,I_E=0
60
I_C=1mA,R_BE=∞
50
I_E=10µA,I_C=0
6
See test circuit
TYP
150
25
0.19
0.94
70
MAX
1
1
560
0.5
1.2
UNIT
µA
µA
MHz
pF
V
V
V
V
V
ns
UTC UNISONIC TECHNOLOGIES CO. LTD ¹
QW-R209-001,A