2SC5765 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

UTC2SC5765 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
Ic-VCE
5
60 30
20
4
Common Emitter
Ta= 25℃
10
3
8
6
2
4
2
1
1
0
IB=0mA
0
0.5
1.0
1.5
2.0
Collector Emitter Voltage VCE(V)
hFE-Ic
10000
Common Emitter
VCE=1.5V
1000
Ta=100℃
Ta= 25℃ Ta= -25℃
100
VCE(sat)-Ic
1
Common Emitter
Ic/IB=50
Ta=100℃
0.1
Ta= 25℃
Ta= -25℃
0.01
0.001
0.01
0.1
1
10
Collector Current Ic (A)
Ic-VBE
5.0
Common Emitter
VCE=1.5V
4.0
Ta=100℃
3.0
Ta= 25℃
2.0
Ta= -25℃
1.0
10
0.01
0.1
1
10
Collector Current Ic (A)
100
Safe Operating Area
when a device is mounted
on a Glass epoxy board
(35mm*30mm*1mm)
10 ^{Ic max(Pulsed)}
1ms*
Ic max
1 ^(Continous)
t=100ms*
DC Operation
0.1 *Single nonrepetitive
pulse
Ta= 25℃
Curves must be derated linearly
0.01 ^{with increase in temperature}
0.01 0.1
1
VCEO max
10
100
Collector Emitter Voltage VCE(V)
0
0
600
0.2 0.4 0.6 0.8 ^{1.0 1.2} 1.4
Base Emitter Voltage VBE(V)
Pc-Ta
400
200
0
0
50
100
150
Ambient Temperature Ta(℃)
UTC UNISONIC TECHNOLOGIES CO. LTD ²
QW-R216-002,B